SNN0630Q

SNN0630Q Advanced N-Ch Trench MOSFET Portable Equipment Application Features  Low On-state resistance: 28m at VGS = 10V, ID = 2.9A  Low gate charge: Qg= 4.5nC (Typ.)  High performance trench technology for extremely low RDS(on)  100% avalanche tested  Halogen free and RoHS compliant device Ordering Information Part Number Marking Package G D S SNN0630Q SNN0630 SOT-223 D SOT-223 Marking Information SNN0630 YWW Column 1: Device Code Column 2: Production Information e.g.) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range VDSS VGSS ID Tc=25C Tc=70C IDM EAS IAR EAR PD TJ Tstg * Limited only maximum junction ...