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SNN4010D

KODENSHI KOREA
Part Number SNN4010D
Manufacturer KODENSHI KOREA
Description N-Ch Trench MOSFET
Published Jan 24, 2017
Detailed Description SNN4010D N-Ch Trench MOSFET Power Switching Application Features  Drain-source breakdown voltage: BVDSS=100V  Low ga...
Datasheet PDF File SNN4010D PDF File

SNN4010D
SNN4010D

Overview
SNN4010D N-Ch Trench MOSFET Power Switching Application Features  Drain-source breakdown voltage: BVDSS=100V  Low gate charge device  Low drain-source On resistance: RDS(on)=25mΩ (Typ.
)  Advanced trench process technology  High avalanche energy, 100% test Ordering Information Part Number Marking Package SNN4010D SNN4010 TO-252 D G S TO-252 Marking Information SNN 4010 YWW Column 1, 2: Device Code Column 3: Production Information e.
g.
) YWW -.
YWW: Date Code (year, week) Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage VDSS VGSS Drain current (DC) * Drain current (Pulsed) * Single pulsed avalanche...


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