TMM27512DI-20

TOSHIBA MOS MEMORY PRODUCT 65,536 WORD X 8 BIT N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY PRELIMINARY TMM27512DI~20 TMM27512DI-25 DESCRIPTION The TMM27512DI is a 65,536 word X 8 bit ultraviolet light erasable and electrically programmable read only memory. For read operation, the TMM27512DI's access time is 200ns/250ns. The TMM27512DI operates from a single 5volt power supply and has a low power standby mode which reduces power dissipation without increasing access time. The standby mode is achieved by applying a TIL-high level signal to the CE input. For program operation, the programming is achieved by using the high speed prgramming mode. TMM27512DI is fabricated with N-channel silicon double layer gate MOS technology. FEATURES Vee tAec lee2 leel -15 150ns I 5V±5% I 120mA 35mA -20 200ns Wide operating temparature range -40-85°C Full static operation High speed programming mode Inputs and outputs TIL compatible Pin compatible with ...