TMM27512D-250

TOSHIBA MOS MEMORY PRODUCT 65,536 WORD X 8 BIT N-MOS UV ERASABLE AND EL- TMM27512D-20,TMM27512D-200 ECTRICALLY PROGRAMMABLE READ ONLY MEMORY PRELIMINARY TMM27512D-25,TMM27512D-250 DESCRIPTION The TMM27512D is a 65,536 word X 8 bit ultraviolet light erasable and electrically programmable read memory. For read operation, the TMM27512D's access time is 200ns/250ns. The TMM27512D operates from a single 5volt power supply and has a low power standby mode which FEATURES -200 -250 I !5V±10% ~~----~-------r------~-2-0-0--ns I 250ns I 35mA 130mA 40mA reduces power dissipation without increasing access time. The standby mode is achieved by applying a TTL-high level signal to the CE input. For program operation, the programming is achieved by using the high speed prgramming mode. The TMM27512D is fabricated with N-channel silicon double layer gate MOS technology. Full static operation High speed programming mode Inputs and outputs TTL compatible Pin compatible with i27...