N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
TOSHIBA MOS MEMORY PRODUCT
32,768 WORD X 8 BIT N·MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
SILICON...
Description
TOSHIBA MOS MEMORY PRODUCT
32,768 WORD X 8 BIT N·MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
SILICON STACKED GATE MOS
TMM27256ADI-15 TMM27256ADI-20
DESCRIPTION
The TMM27256ADI is a 32,768 word x 8 bit ultraviolet light erasable and electrically program· mabie read only memory.
For read operation, The TMM27256ADI's access time is 150ns/200ns, and the TMM27256ADI operates from a single 5-volt power supply and has low power standby mode which reduces the power dissipation without increasing access time. The standby
mode is achieved by applying a TIL-high level signal to the CE input.
For program operation, the programming is achieved by using the high speed programming mode.
The TMM27256ADI is fabricated with the N-channel silicon double layer gate MaS technology.
FEATURES
Vee tAee
1eC2
lee 1
-15 150ns
I
5V±5%
I
100mA
30mA
'-
-20 200ns
Wide operating temparature range -40-85°C Full static operation High speed programming mode Inputs and outp...
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