DN200F

Semiconductor Features Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= 0.2V Typ. @IC/IB=1A/50 ㎃) Suitable for low voltage large current drivers Complementary pair with DP200F Switching Application Ordering Information Type NO. DN200F Marking N04 Outline Dimensions DN200F NPN Silicon Transistor Package Code SOT-89 unit : mm KST-2125-002 PIN Connections 1. Base 2. Collector 3. Emitter 1 DN200F Absolute maximum ratings Characteristic Symbol Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC PC PC* TJ Tstg * : When mounted on 40×40×0.8mm ceramic substate Ratings 15 12 5 2 0.5 2 150 -55~150 (Ta=25°C) Unit V V V A W °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC ...