CMOS STATIC RAM
TOSHIBA MOS MEMORY PRODUCT
65,536 WORD X 1 BIT CMOS STATIC RAM
SILICON GATE CMOS
TC5561 P-55 TC5561 P-70
DESCRIPTION
...
Description
TOSHIBA MOS MEMORY PRODUCT
65,536 WORD X 1 BIT CMOS STATIC RAM
SILICON GATE CMOS
TC5561 P-55 TC5561 P-70
DESCRIPTION
The TC5561 P is a 65,536 bit high speed static random access memory organized as 65,536 words by 1 bit using CMOS technology, and Operated from a single 5-volt supply.
Toshiba's high performance device technology provides both high speed and low power features with a maximum access time of 55ns/70ns and maximum operating current of 100mA at minimum cycle time.
The TC5561 P also features an automatic stand-by mode. When deselected by Chip Enable (CE), the
FEATURES
Fast access time: TC5561 P-55 55ns(MAX.) TC5561 P-70 70ns(MAX.)
"Low power dissipation: Operation 1OOmA(MAX.) Standby1 OOJLA(MAX.)
e 5V single power supply
PIN CONNECTION (TOP VIEW)
TC5 ~ti iF
AU
A,
II.".?
A3
A4
11.5 A6 A7 DOUT
'NE OND
II
VDL'
Alb 11.14
11.13 11.1;0
.\11 AI0
A" Ab
DIN ITI;'
(3UOmi 1 DIP)
operating current is reduced from 1OOmA to 100JLA. The TC5561 P is suitable for use in main memo...
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