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TMM2068AP-25 Dataheets PDF



Part Number TMM2068AP-25
Manufacturers Toshiba
Logo Toshiba
Description STATIC RAM
Datasheet TMM2068AP-25 DatasheetTMM2068AP-25 Datasheet (PDF)

TOSHIBA MOS MEMORY PRODUCT 4,096 WORD X 4 BIT STATIC RAM SILICON MONOLITHIC N-CHANNEL SILICON GATE MOS PROCESS DESCRIPTION TMM2068AP-25, TMM2068AP-35 TMM2068AP-45 The TMM2068AP is a 16,384 bits high speed and low power static random access memory organized as 4,096 words by 4 bits and operates from a single 5V supply. Toshiba's high performance device technology provides both high speed and low power features with a maximum access time of 25ns/35ns/45ns and maximum operating current of l35/l2.

  TMM2068AP-25   TMM2068AP-25



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TOSHIBA MOS MEMORY PRODUCT 4,096 WORD X 4 BIT STATIC RAM SILICON MONOLITHIC N-CHANNEL SILICON GATE MOS PROCESS DESCRIPTION TMM2068AP-25, TMM2068AP-35 TMM2068AP-45 The TMM2068AP is a 16,384 bits high speed and low power static random access memory organized as 4,096 words by 4 bits and operates from a single 5V supply. Toshiba's high performance device technology provides both high speed and low power features with a maximum access time of 25ns/35ns/45ns and maximum operating current of l35/l20/l20mA. When CS goes high, the device is deselected and placed in a low power standby mode in which maximum standby current is 20mA. Thus the TMM2068AP is most suitable for us in cache memory and high speed storage. The T~ill2068AP is offered in a 20 pin standard plastic package with 0.3 inch width for high density assembly. The TMM2068AP is fabricated with ion implanted N channel silicon gate MOS technology for high performance and high reliability. FEATURES • Fast access time tAcc=25ns: TM.


TMM2068AD-45 TMM2068AP-25 TMM2068AP-35


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