Document
TOSHIBA MOS MEMORY PRODUCT
4,096 WORD X 4 BIT STATIC RAM SILICON MONOLITHIC N-CHANNEL SILICON GATE MOS PROCESS
DESCRIPTION
TMM2068AP-25, TMM2068AP-35 TMM2068AP-45
The TMM2068AP is a 16,384 bits high speed and low power static random access memory organized as 4,096 words by 4 bits and operates from a single 5V supply. Toshiba's high performance device technology provides both high speed and low power features with a maximum access time of 25ns/35ns/45ns and maximum operating current of l35/l20/l20mA. When CS goes high, the device is deselected and placed in a low power standby mode in which maximum standby current is 20mA. Thus the TMM2068AP is most suitable for us in cache memory and high speed storage. The T~ill2068AP is offered in a 20 pin standard plastic package with 0.3 inch width for high density assembly. The TMM2068AP is fabricated with ion implanted N channel silicon gate MOS technology for high performance and high reliability.
FEATURES
• Fast access time tAcc=25ns: TM.