TMM2015BP-12

TOSHIBA MOS MEMORY PRODUCTS 2,048 WORD X 8 BIT STATIC RAM TMM2015BP-90, TMM2015BP-12 SILICON MONOLITHIC TMM2015BP-10, TMM2015BP-15N-CHANNEL SILICON GATE MOS PROCESS DESCRIPTION The TMM2015BP is a 16, 384 bits high speed and low power static random access memory organized as 2, 048 words by 8 bits and operates from a single 5V supply. Toshiba's high performance device technology provides both high speed and low power features with a maximum access time of 90ns/ 100ns/120ns/150ns and maximum operating current of 50mA. When CS is a logical high, the device is placed In a low power standby mode in which maximum standby current is 5mA. Thus the TMM201 nBP IS most sUitable for use In microcomputer oenpheral memory where the low power applications are required. The TMM201 5BP IS fabricated with Ion Implanted N channel silicon gate MOS technology for high performance and high reliability FEATURES Access Time and Current Part ~Number TMM20l5BP-90 TMM20l5BP-l0 TMM20l5BP-12 TMM20l5BP-15 ...