IGBT
FGH25N120FTDS — 1200 V, 25 A Field Stop Trench IGBT
November 2013
FGH25N120FTDS
1200 V, 25 A Field Stop Trench IGBT
F...
Description
FGH25N120FTDS — 1200 V, 25 A Field Stop Trench IGBT
November 2013
FGH25N120FTDS
1200 V, 25 A Field Stop Trench IGBT
Features
High Speed Switching Low Saturation Voltage: VCE(sat) = 1.60 V @ IC = 25 A High Input Impedance RoHS Compliant
Applications
Solar Inverter, UPS, Welder, PFC
General Description
Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
C
G CE
TO-247
Absolute Maximum Ratings
Symbol
VCES VGES IC
ICM (1)
IF
IFM PD
TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current
@ TC = 25oC @ TC = 100oC
Diode Continuous Forward Current Diode Continuous Forward Current
@ TC = 25oC @ TC = 100oC
Diode Maximum Forward Current
Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature
@ TC = 25oC @ TC = ...
Similar Datasheet
- FGH25N120FTDS IGBT - Fairchild Semiconductor
- FGH25N120FTDS IGBT - ON Semiconductor