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FQH35N40
MOSFET
Description
FQH35N40 400V N-Channel MOSFET FQH35N40 400V N-Channel MOSFET Features 35A, 400V, RDS(on) = 0.105Ω @VGS = 10 V Low gate charge ( typical 110 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability July 2005 QFET® Description These N-Channel enhancement mode power field effect
transistor
s are produced using F...
Fairchild Semiconductor
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FQH35N40
MOSFET
- Fairchild Semiconductor
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