FCH104N60F

FCH104N60F — N-Channel SuperFET® II FRFET® MOSFET FCH104N60F N-Channel SuperFET® II FRFET® MOSFET 600 V, 37 A, 104 mΩ December 2014 Features 650 V @ TJ = 150°C Typ. RDS(on) = 98 mΩ Ultra Low Gate Charge (Typ. Qg = 107 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 109 pF) 100% Avalanche Tested RoHS Compliant Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove ...