DatasheetsPDF.com

FCH76N60N Dataheets PDF



Part Number FCH76N60N
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description MOSFET
Datasheet FCH76N60N DatasheetFCH76N60N Datasheet (PDF)

FCH76N60N — N-Channel SupreMOS® MOSFET FCH76N60N N-Channel SupreMOS® MOSFET 600 V, 76 A, 36 mΩ November 2013 Features • RDS(on) = 28 mΩ (Typ.) @ VGS = 10 V, ID = 38 A • Ultra Low Gate Charge (Typ. Qg = 218 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employin.

  FCH76N60N   FCH76N60N


Document
FCH76N60N — N-Channel SupreMOS® MOSFET FCH76N60N N-Channel SupreMOS® MOSFET 600 V, 76 A, 36 mΩ November 2013 Features • RDS(on) = 28 mΩ (Typ.) @ VGS = 10 V, ID = 38 A • Ultra Low Gate Charge (Typ. Qg = 218 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. D G D S TO-247 G S MOSFET Maximum Ratings TC = 25oC unless otherwise.


FCH76N60NF FCH76N60N FCH041N60E


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)