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FCH76N60N — N-Channel SupreMOS® MOSFET
FCH76N60N
N-Channel SupreMOS® MOSFET
600 V, 76 A, 36 mΩ
November 2013
Features
• RDS(on) = 28 mΩ (Typ.) @ VGS = 10 V, ID = 38 A • Ultra Low Gate Charge (Typ. Qg = 218 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF) • 100% Avalanche Tested • RoHS Compliant
Application
• Solar Inverter • AC-DC Power Supply
Description
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
D
G D S
TO-247
G S
MOSFET Maximum Ratings TC = 25oC unless otherwise.