MOSFET
FCH76N60NF — N-Channel SupreMOS® FRFET® MOSFET
FCH76N60NF
N-Channel SupreMOS® FRFET® MOSFET
600 V, 72.8 A, 38 mΩ
Novem...
Description
FCH76N60NF — N-Channel SupreMOS® FRFET® MOSFET
FCH76N60NF
N-Channel SupreMOS® FRFET® MOSFET
600 V, 72.8 A, 38 mΩ
November 2013
Features
RDS(on) = 28.7 mΩ (Typ.) @ VGS = 10 V, ID = 38 A Ultra Low Gate Charge (Typ. Qg = 230 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 896 pF) 100% Avalanche Tested RoHS Compliant
Application
Solar Inverter AC-DC Power Supply
Description
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET® MOSFET’s optimized body diode re...
Similar Datasheet
- FCH76N60N MOSFET - Fairchild Semiconductor
- FCH76N60NF MOSFET - Fairchild Semiconductor