FDH055N15A

FDH055N15A — N-Channel PowerTrench® MOSFET March 2015 FDH055N15A N-Channel PowerTrench® MOSFET 150 V, 167 A, 5.9 mΩ Features RDS(on) = 4.8 mΩ (Typ.) @ VGS = 10 V, ID = 120 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Sever / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter G D S TO-247 Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage - DC - AC (f > 1 Hz) Drain Current - Continuou...