FQA8N100C — N-Channel QFET® MOSFET
FQA8N100C
N-Channel QFET® MOSFET
1000 V, 8 A, 1.45 Ω
Features
• RDS(on) = 1.45 Ω (Ma...
FQA8N100C — N-Channel QFET® MOSFET
FQA8N100C
N-Channel QFET® MOSFET
1000 V, 8 A, 1.45 Ω
Features
RDS(on) = 1.45 Ω (Max.) @ VGS = 10 V, ID = 4 A Low Gate Charge (Typ. 53 nC) Low Crss (Typ. 16 pF) 100% Avalanche Tested
March 2014
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies.
D
G D S
TO-3PN
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
...