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FQA9N90C_F109
MOSFET
Description
FQA9N90C_F109 — N-Channel QFET® MOSFET FQA9N90C_F109 N-Channel QFET® MOSFET 900 V, 9 A, 1.4 Ω Features 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4.5 A Low Gate Charge (Typ. 45 nC) Low Crss . 14 pF) 100% Avalanche Tested RoHS compliant April 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semic...
Fairchild Semiconductor
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