FQA8N80C_F109

FQA8N80C_F109 800V N-Channel MOSFET FQA8N80C_F109 800V N-Channel MOSFET Features 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 13pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant November 2007 QFET ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. D G DS TO-3PN FQA Series G S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain C...