FCA76N60N

FCA76N60N — N-Channel SupreMOS® MOSFET FCA76N60N N-Channel SupreMOS® MOSFET 600 V, 76 A, 36 mΩ May 2014 Features RDS(on) = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A Ultra Low Gate Charge (Typ. Qg = 218 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF) 100% Avalanche Tested RoHS Compliant Application Solar Inverter AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G G D S TO-3PN MOSFET Maximum Ratings TC = 25oC unless otherwise note...