MOSFET
FDA38N30 — N-Channel UniFETTM MOSFET
FDA38N30
N-Channel UniFETTM MOSFET
300 V, 38 A, 85 mΩ
Features
• RDS(on) = 70 mΩ (...
Description
FDA38N30 — N-Channel UniFETTM MOSFET
FDA38N30
N-Channel UniFETTM MOSFET
300 V, 38 A, 85 mΩ
Features
RDS(on) = 70 mΩ (Typ.) @ VGS = 10 V, ID = 19 A Low Gate Charge (Typ. 60 nC) Low Crss (Typ. 60 pF) 100% Avalanche Tested ESD Improved Capability RoHS Compliant
Applications
PDP TV Uninterruptible Power Supply AC-DC Power Supply
May 2014
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
G D S
TO-3PN
G S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS
ID
IDM EAS IAR EAR dv/dt
PD
Parameter
Drain to Source Voltage
Gate to S...
Similar Datasheet
- FDA38N30 MOSFET - Fairchild Semiconductor