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TC511000J-85 Dataheets PDF



Part Number TC511000J-85
Manufacturers Toshiba
Logo Toshiba
Description DRAM
Datasheet TC511000J-85 DatasheetTC511000J-85 Datasheet (PDF)

TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS DESCRIPTION TC511000P/J/Z-85, TC511000P/J/Z-l0 TC511000P/J/Z-12 The TC5llOOOP/J/Z is the ne~v generation dynamic RAN organized 1,048,576 words by 1 bit. The TC5llOOOP/J/Z utilizes TOSHIBA's CHOS Silicon gate process technology as well as ad- vanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inputs permit the TC5llOOOP/J/Z to be packaged in a s.

  TC511000J-85   TC511000J-85



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TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS DESCRIPTION TC511000P/J/Z-85, TC511000P/J/Z-l0 TC511000P/J/Z-12 The TC5llOOOP/J/Z is the ne~v generation dynamic RAN organized 1,048,576 words by 1 bit. The TC5llOOOP/J/Z utilizes TOSHIBA's CHOS Silicon gate process technology as well as ad- vanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inputs permit the TC5llOOOP/J/Z to be packaged in a standard 18 pin plastic DIP, 26/20 pin plastic SOJ and 20/19 pin plastic ZIP. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. System oriented features include single power supply of 5V±10% tolerance" direct interfacing capability with high performance logic families such as Schottky TTL. IJTest Mode" function is implemented from Ilevision C. FEATURES • 1,048,576 words by 1 bit organization • Fast access .


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