TOSHIBA MOS MEMORY PRODUCT
262,144 WORD X 1 BIT DYNAMIC RAM
N-CHANNEL SILICON GATE MOS
TMM41256P/T-12 TMM41256P/T-15
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TOSHIBA MOS MEMORY PRODUCT
262,144 WORD X 1 BIT DYNAMIC RAM
N-CHANNEL SILICON GATE MOS
TMM41256P/T-12 TMM41256P/T-15
DESCRIPTION
The TMM41256P/T is the new generation dynamic RAM organized 262,144 words by 1 bit, it is successor to the industry standard TMM4164AP. The TMM41256P/T utilizes TOSHI BA's N-channel Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.
Multiplexed address inputs permit the TMM-
41256P IT to be packaged in a standard 16 pin plastic DIP and 18 pin plastic leaded chip carner. The package size provides high system t)lt riensltles and IS compatible with Widely available al:ltomated testing and Insertion eqUipment,
System oriented features include sing Ie power supply of 5V ± 10% tolerance, direct interfacing capability with high perforrna nce logic families such as
Schottky TTL.
FEATURES
262,144 words by 1 bit organization Fast access time and cycle time
DEV...