MOSFET
FCPF4300N80Z — N-Channel SuperFET® II MOSFET
August 2015
FCPF4300N80Z
N-Channel SuperFET® II MOSFET
800 V, 2.2 A, 4.3...
Description
FCPF4300N80Z — N-Channel SuperFET® II MOSFET
August 2015
FCPF4300N80Z
N-Channel SuperFET® II MOSFET
800 V, 2.2 A, 4.3 Ω Features
RDS(on) = 3.4 Ω (Typ.) Ultra Low Gate Charge (Typ. Qg = 6.8 nC) Low Eoss (Typ. 0.8 uJ @ 400V) Low Effective Output Capacitance (Typ. Coss(eff.) = 36 pF) 100% Avalanche Tested
RoHS Compliant
ESD Improved Capability
Applications
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
AC - DC Power Supply LED Lighting
D
GDS TO-220F
G
...
Similar Datasheet
- FCPF4300N80Z MOSFET - Fairchild Semiconductor