MOSFET
FCPF220N80 — N-Channel SuperFET® II MOSFET
FCPF220N80
N-Channel SuperFET® II MOSFET
800 V, 23 A, 220 m
May 2015
Fea...
Description
FCPF220N80 — N-Channel SuperFET® II MOSFET
FCPF220N80
N-Channel SuperFET® II MOSFET
800 V, 23 A, 220 m
May 2015
Features
Typ. RDS(on) = 188 m Ultra Low Gate Charge (Typ. Qg = 78 nC) Low Eoss (Typ. 7.5 uJ @ 400 V) Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF) 100% Avalanche Tested RoHS Compliant ESD Improved Capability
Applications
AC-DC Power Supply LED Lighting
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
D
GDS
TO-220F
...
Similar Datasheet
- FCPF220N80 MOSFET - Fairchild Semiconductor