Dual P-ch Trench MOSFET
Semiconductor
Portable Equipment Application.
Notebook Application.
Features
• Low VGS(th) : VGS(th)=1.0~3.0V • Small...
Description
Semiconductor
Portable Equipment Application.
Notebook Application.
Features
Low VGS(th) : VGS(th)=1.0~3.0V Small footprint due to small package Low RDS (ON) : RDS (ON) =66mΩ
Ordering Information
Type NO.
Marking
SUF3001
SUF3001
Outline Dimensions
5.88~6.18 3.70~3.90
SUF3001
Dual P-channel Trench MOSFET
Package Code SOP-8
unit : mm
0.27 Max.
0.52 Max.
4.81~5.01
3.81 Typ.
1.27 Typ.
0.27 Max.
1.24~1.44
0.46 Min.
Block Diagram
KSD-T7F004-000
PIN Connections 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 5. Drain 2 6. Drain 2 7. Drain 1 8. Drain 1
1
Absolute maximum ratings
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) * Total Power dissipation ** Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy
② ② ① ①
Junction temperature
Storage temperature range
* Limited by maximum junction temperature ** Device mounted on a glass-epoxy bo...
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