Document
FCP110N65F — N-Channel SuperFET® II FRFET® MOSFET
December 2014
FCP110N65F
N-Channel SuperFET® II FRFET® MOSFET
650 V, 35 A, 110 mΩ
Features
• 700 V @ TJ = 150°C • Typ. RDS(on) = 96 mΩ (Typ.) • Ultra Low Gate Charge (Typ. Qg = 98 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF) • 100% Avalanche Tested • RoHS Compliant
Applications
• LCD / LED / PDP TV • Telecom / Server Power Supplies
• Solar Inverter
• AC - DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power an.