FCB110N65F

FCB110N65F — N-Channel SuperFET® II FRFET® MOSFET August 2016 FCB110N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 35 A, 110 mΩ Features 700 V @TJ = 150°C Typ. RDS(on) = 96 mΩ (Typ.) Ultra Low Gate Charge (Typ. Qg = 98 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF) 100% Avalanche Tested RoHS Compliant Applications Telecom/Server Power Supplies Solar Inverters Computing Power Supplies FPD TV Power/Lighting Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. SuperFET® II FRFET® MOSFET combines a faster and more rugged intrinsic body diode performance with fast switching, aimed at achieving better reliability and efficiency especially in resonant switching applications. SuperFET® II FRFET® is very suitable for the switching power ap...