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IRFS634

250V/5.5A N-Channel Power MOSFET

Description

250V/5.5A N-Channel Power MOSFET (Discontinued) IRFS634 SAMSUNG General Description  Low on resistance  Improved inductive ruggedness  Fast switching time  Rugged polysilicon gate cell structure  Lower input capacitance  Extended safe operating area  Improved high temperature reliability TO-220F Features  VDSS=250V, ID=5.5A  RDS(ON) ≤ 0.45 Ω @ V...

TAITRON

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