FDB28N30

FDB28N30 N-Channel MOSFET FDB28N30 N-Channel MOSFET 300V, 28A, 0.129Ω Features RDS(on) = 0.108Ω ( Typ.)@ VGS = 10V, ID = 14A Low gate charge ( Typ. 39nC) Low Crss ( Typ. 35pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant June 2007 UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D D GS D2-PAK G MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous (...