MOSFET
FDB13AN06A0 — N-Channel PowerTrench® MOSFET
January 2014
FDB13AN06A0
N-Channel PowerTrench® MOSFET
60 V, 62 A, 13.5 m...
Description
FDB13AN06A0 — N-Channel PowerTrench® MOSFET
January 2014
FDB13AN06A0
N-Channel PowerTrench® MOSFET
60 V, 62 A, 13.5 mΩ
Features
Applications
rDS(on) = 11.5 mΩ ( Typ.) @ VGS = 10 V, ID = 62 A
Motor Load Control
Qg(tot) = 22 nC ( Typ.) @ VGS = 10 V
DC-DC converters and Off-line UPS
Low Miller Charge
Distributed Power Architectures and VRMs
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82555
D D
G S
D2-PAK
G S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Continuous (TA = 25oC, VGS = 10V, RθJA = 43oC/W) Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC RθJA RθJA
Thermal Resistance Junction to Cas...
Similar Datasheet
- FDB13AN06A0 MOSFET - Fairchild Semiconductor