Document
Rh
Semiconductor
Features
• Ultra high speed switching application
• Low forward voltage : VF=0.9V(Typ.)
• Fast reverse recovery time : trr=1.6 ㎱(Typ.) • Small total capacitance : CT=2.2 ㎊(Typ.)
Ordering Information
Type No.
Marking
SDS511G
1G
Package Code SOD-123
Outline Dimensions
3.30~3.70 2.60~2.80
SDS511G
Switching Diode
unit : mm
0.99 Max.
1.50~1.70
CATHODE MARK
PIN Connections 1. Anode 2. Cathode
0.22 Max.
0.70~0.80
KSD-D6B004-000
1
Absolute Maximum Ratings
Characteristic
Peak reverse voltage
Reverse voltage
Peak forward current
Average forward current Peak forward surge current (Non-repetitive 60Hz sine wave) Power dissipation (*Note1)
Junction temperature Storage temperature range *Note1: Device mounted on glass epoxy board
Symbol
VRM VR IFM IO
IFSM
PD Tj Tstg
Rating
85 80 300 100
2
350 150 -55 ~ 150
SDS511G
(Ta=25°C)
Unit
V V
㎃ ㎃
A
㎽
°C °C
Electrical Characteristics
Characteristic
Symbol
Forward voltage
VF(1) VF(2)
VF(3)
Rever.