STC6075Q

STC6075Q NPN Silicon Transistor Descriptions General purpose amplifier High voltage application PIN Connection Features High collector breakdown voltage : VCEO = 90V Low collector saturation voltage : VCE(sat)=0.5V(MAX.) Ordering Information Type No. Marking STC6075Q STC6075□ □ : Year & Week Code Package Code SOT-223 SOT-223 Absolute maximum ratings Characteristic Symbol Ratings (Ta=25°C) Unit Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector power dissipation Junction temperature Storage temperature * : Single pulse, tp= 300 ㎲ ** : When mounted on ceramic substrate(250 ㎟×0.8t) VCBO VCEO VEBO IC ICP* PC PC** TJ Tstg 120 90 6 1.5 3.0 1.1 1.5 150 -55~150 V V V A(DC) A(Pulse) W °C °C KSD-T5A006-000 1 STC6075Q Electrical Characteristics Characteristic Symbol Test Condition (Ta=25°C) Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=100μA, IE=0 120 - - V Collector-Emitter ...