SMNY2Z30

SMNY2Z30 Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  High voltage: BVDDS=300V (Min.)  Low gate charge: Qg=2.9nC (Typ.)  Low drain-source On resistance: RDS(on)=8Ω (Max.)  Built-in protection zener diode  RoHS compliant device Ordering Information Part Number Marking Package SMNY2Z30 SMNY2Z30 TO-92 GDS TO-92 Marking Information SMNY 2Z30 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. YWW: Date Code (year, week) Absolute maximum ratings (Ta=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Avalanche current (Note 2) Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range VDSS VGSS ID Ta=25C Ta=100C IDM IAS EAS IAR EAR PD TJ Tstg * Limited only maximum junction temperature Rev. date: ...