FCD2250N80Z

FCD2250N80Z — N-Channel SuperFET® II MOSFET December 2014 FCD2250N80Z N-Channel SuperFET® II MOSFET 800 V, 2.6 A, 2.25  Features RDS(on) = 1.8 Typ.) Ultra Low Gate Charge (Typ. Qg = 11 nC) Low Eoss (Typ. 1.1 uJ @ 400V) Low Effective Output Capacitance (Typ. Coss(eff.) = 51 pF) 100% Avalanche Tested RoHS Compliant ESD Improved Capability Applications Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications. AC - DC Power Supply LED Lighting D G S D D-...