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FCD2250N80Z
MOSFET
Description
FCD2250N80Z — N-Channel SuperFET® II MOSFET December 2014 FCD2250N80Z N-Channel SuperFET® II MOSFET 800 V, 2.6 A, 2.25 Features RDS(on) = 1.8 Typ.) Ultra Low Gate Charge (Typ. Qg = 11 nC) Low Eoss (Typ. 1.1 uJ @ 400V) Low Effective Output Capacitance (Typ. Coss(eff.) = 51 pF) 100% Avalanche Tested RoHS Compliant ESD Improved Capability ...
Fairchild Semiconductor
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