FCD1300N80Z

FCD1300N80Z — N-Channel SuperFET® II MOSFET FCD1300N80Z N-Channel SuperFET® II MOSFET 800 V, 4 A, 1.3  August 2014 Features RDS(on) = 1.05 Typ.) Ultra Low Gate Charge (Typ. Qg = 16.2 nC) Low Eoss (Typ. 1.57 uJ @ 400V) Low Effective Output Capacitance (Typ. Coss(eff.) = 48.7 pF) 100% Avalanche Tested RoHS Compliant ESD Improved Capability Applications AC - DC Power Supply LED Lighting Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as A...