FDD5N60NZ

FDD5N60NZ — N-Channel UniFETTM II MOSFET FDD5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.0 A, 2 Ω Features RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.0 A Low Gate Charge (Typ. 10 nC) Low Crss (Typ. 5 pF) 100% Avalanche Tested Improved dv/dt Capability ESD Imoroved Capability RoHS Compliant Applications LCD/LED/PDP TV Lighting Uninterruptible Power Supply November 2013 Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFETTM II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX ...