6R385P

CoolMOSTM Power Transistor Features Lowest figure-of-merit RON x Qg Ultra low gate charge Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ IPI60R385CP 650 V 0.385 Ω 17 nC PG-TO262 CoolMOS CP is specially designed for: Hard switching SMPS topologies Type IPI60R385CP Package PG-TO262 Ordering Code Marking SP000103250 6R385P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness Gate source voltage ID I D,pulse E AS E AR I AR dv /dt V GS T C=25 °C T C=100 °C T C=25 °C I D=3.4 A, V DD=50 V I D=3.4 A, V DD=50 V V DS=0...480 V static AC (f >1 Hz) Power dissipation P tot T C=25...