SUN0550D

SUN0550D Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=1.23Ω (Typ.)  Low gate charge: Qg=10.5nC (Typ.)  Low reverse transfer capacitance: Crss=2pF (Typ.)  Halogen free device and RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SUN0550D SUN0550 TO-252 D G S TO-252 Marking Information SUN 0550 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range VDSS VGSS ID Tc=25C Tc=100C IDM EAS IAR EAR PD TJ Tstg * Limited only maximum junction te...