3DG8
NPN Silicon High Frequency Low Power Transistor
Features: 1. Using epitaxy planar technology structure. High worki...
3DG8
NPN Silicon High Frequency Low Power
Transistor
Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source
adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
Parameter name
Symbols Unit
Total Dissipation
Ptot mW
Max. Collector Current ICM mA
Junction Temperature
Tjm °C
Storage Temperature
Tstg °C
C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage
V(BR)CBO V(BR)CEO V(BR)EBO
V V V
Collector- Emitter
VCE(sat)
Saturation Voltage Drop
V
Base- Emitter Saturation
VBE(sat)
Voltage Drop
V
C-B Leakage Current
ICBO uA
C-E Leakage Current E-B Leakage Current
ICEO uA IEBO uA
DC Current Gain
hFE
A
15 15
Specifications BC
200 30 175 -55~+175
40 40 25 25
4
0.5
1.0
0.1 0.1 0.1 25~270
Transition frequency
fT MHz 150
15...
