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FDD7N25LZ Dataheets PDF



Part Number FDD7N25LZ
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDD7N25LZ DatasheetFDD7N25LZ Datasheet (PDF)

FDD7N25LZ — N-Channel UniFETTM MOSFET June 2016 FDD7N25LZ N-Channel UniFETTM MOSFET 250 V, 6.2 A, 550 mΩ Features • RDS(on) = 430 mΩ (Typ.) @ VGS = 10 V, ID = 3.1 A • Low Gate Charge (Typ. 12 nC) • Low Crss (Typ. 8 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Consumer Appliances • Lighting • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltag.

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FDD7N25LZ — N-Channel UniFETTM MOSFET June 2016 FDD7N25LZ N-Channel UniFETTM MOSFET 250 V, 6.2 A, 550 mΩ Features • RDS(on) = 430 mΩ (Typ.) @ VGS = 10 V, ID = 3.1 A • Low Gate Charge (Typ. 12 nC) • Low Crss (Typ. 8 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Consumer Appliances • Lighting • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D D G G S D-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. ©2010 Fairchild Semiconductor Corporation 1 FDD7N25LZ Rev. 1.5 FDD7N25LZTM 250 ±20 6.2 3.7 25 115 5.5 5.6 10 56 0.45 -55 to +150 300 Unit V V A A mJ A mJ V/ns W W/oC oC oC FDD7N25LZTM 2.2 110 Unit oC/W www.fairchildsemi.com FDD7N25LZ — N-Channel UniFETTM MOSFET Package Marking and Ordering Information Part Number FDD7N25LZTM Top Mark FDD7N25LZ Package DPAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Off Characteristics BVDSS ΔBVDSS / ΔTJ IDSS IGSSF IGSSR Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250 μA, VGS = 0 V, TC = 25oC 250 ID = 250 μA, Referenced to 25oC - Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V VDS = 200 V, TC = 125oC - Gate to Body Leakage Current, Forward VGS = 20 V, VDS = 0 V - Gate to Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V - Typ. 0.25 - Max. Unit - V - V/oC 1 10 μA 10 μA -10 μA On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance gFS Forward Transconductance VGS = VDS, ID = 250 μA VGS = 10 V, ID = 3.1 A VGS = 5 V, ID = 3.1 A VDS = 20 V, ID = 3.1 A 1.0 - 2.5 V - 0.43 0.55 - 0.45 0.57 Ω - 7 - S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 25 V, VGS = 0 V, f = 1 MHz VDS = 250 V ID = 6.2 A, VGS = 10 V - - - - - (Note 4) - 480 635 pF 65 85 pF 8 12 pF 12 16 nC 1.5 - nC 4 - nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250 V, ID = 6.2 A, VGS = 10 V, RG = 25 Ω - - - (Note 4) - 10 30 ns 15 40 ns 75 160 ns 30 70 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current ISM Maximum Pulsed Drain to Source Diode Forward Current VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 6.2 A trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, ISD = 6.2 A, dIF/dt = 100 A/μs Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 6 mH, IAS = 6.2 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 6.2 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. - - 6.2 A - - 25 A - - 1.4 V - 130 - ns - 0.6 - μC ©2010 Fairchild Semiconductor Corporation 2 FDD7N25LZ Rev. 1.5 www.fairchildsemi.com FDD7N25LZ — N-Channel UniFETTM MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 20 VGS = 10.0V 10 7.0V 5.0V 3.5V 3.0V 2.5V 1 ID, Drain Current[A] RDS(on) [Ω], Drain-Source On-Resistance 0.1 0.03 0.03 *Notes: 1. 250μs Pulse Test 2. TC = 25oC 0.1 1 10 VDS, Drain-Source Voltage[V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1.5 1.2 0.9 VGS = 10V 0.6 VGS = 20V 0.3 0 * Note : TJ = 25oC 3 6 9 12 15 18 ID, Drain Current [A] Figure 5. Capacitance Characteristics 1000 Ciss Coss.


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