Document
FDD7N25LZ — N-Channel UniFETTM MOSFET
June 2016
FDD7N25LZ
N-Channel UniFETTM MOSFET
250 V, 6.2 A, 550 mΩ
Features
• RDS(on) = 430 mΩ (Typ.) @ VGS = 10 V, ID = 3.1 A • Low Gate Charge (Typ. 12 nC) • Low Crss (Typ. 8 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant
Applications
• LCD/LED/PDP TV • Consumer Appliances • Lighting • Uninterruptible Power Supply • AC-DC Power Supply
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
D
G
G
S
D-PAK
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS
ID
IDM EAS IAR EAR dv/dt
PD
TJ, TSTG TL
Parameter
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
- Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC RθJA
Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max.
©2010 Fairchild Semiconductor Corporation
1
FDD7N25LZ Rev. 1.5
FDD7N25LZTM 250 ±20 6.2 3.7 25 115 5.5 5.6 10 56 0.45
-55 to +150 300
Unit V V
A
A mJ A mJ V/ns W W/oC oC oC
FDD7N25LZTM 2.2 110
Unit oC/W
www.fairchildsemi.com
FDD7N25LZ — N-Channel UniFETTM MOSFET
Package Marking and Ordering Information
Part Number FDD7N25LZTM
Top Mark FDD7N25LZ
Package DPAK
Packing Method Tape and Reel
Reel Size 330 mm
Tape Width 16 mm
Quantity 2500 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS ΔBVDSS
/ ΔTJ
IDSS
IGSSF IGSSR
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
ID = 250 μA, VGS = 0 V, TC = 25oC
250
ID = 250 μA, Referenced to 25oC
-
Zero Gate Voltage Drain Current
VDS = 250 V, VGS = 0 V VDS = 200 V, TC = 125oC
-
Gate to Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
-
Gate to Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
-
Typ.
0.25
-
Max. Unit
-
V
-
V/oC
1 10
μA
10
μA
-10
μA
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = VDS, ID = 250 μA VGS = 10 V, ID = 3.1 A VGS = 5 V, ID = 3.1 A VDS = 20 V, ID = 3.1 A
1.0
-
2.5
V
-
0.43 0.55
-
0.45
0.57
Ω
-
7
-
S
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V, f = 1 MHz VDS = 250 V ID = 6.2 A, VGS = 10 V
-
-
-
-
-
(Note 4)
-
480
635
pF
65
85
pF
8
12
pF
12
16
nC
1.5
-
nC
4
-
nC
Switching Characteristics
td(on) tr td(off) tf
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
VDD = 250 V, ID = 6.2 A, VGS = 10 V, RG = 25 Ω
-
-
-
(Note 4)
-
10
30
ns
15
40
ns
75
160
ns
30
70
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 6.2 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 6.2 A, dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 6 mH, IAS = 6.2 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 6.2 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics.
-
-
6.2
A
-
-
25
A
-
-
1.4
V
-
130
-
ns
-
0.6
-
μC
©2010 Fairchild Semiconductor Corporation
2
FDD7N25LZ Rev. 1.5
www.fairchildsemi.com
FDD7N25LZ — N-Channel UniFETTM MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
20
VGS = 10.0V
10
7.0V
5.0V
3.5V
3.0V
2.5V
1
ID, Drain Current[A]
RDS(on) [Ω], Drain-Source On-Resistance
0.1 0.03
0.03
*Notes: 1. 250μs Pulse Test 2. TC = 25oC
0.1
1
10
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
1.5
1.2
0.9 VGS = 10V
0.6
VGS = 20V
0.3 0
* Note : TJ = 25oC
3
6
9
12
15
18
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
1000 Ciss
Coss.