FDMC8200S

FDMC8200S Dual N-Channel PowerTrench® MOSFET March 2011 FDMC8200S Dual N-Channel PowerTrench® MOSFET 30 V, 10 mΩ, 20 mΩ Features Q1: N-Channel „ Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 6 A „ Max rDS(on) = 32 mΩ at VGS = 4.5 V, ID = 5 A Q2: N-Channel „ Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 8.5 A „ Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7.2 A „ RoHS Compliant General Description This device includes two specialized N-Channel MOSFETs in a due power33(3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency. Applications „ Mobile Computing „ Mobile Internet Devices „ General Purpose Point of Load Pin 1 Bottom D1 D1 D1 G1 D1 D2/S1 S2 S2 S2 G2 Bottom VIN VIN GHSVIN VIN SWITCH NODE GND GND GND GLS 5 Q2 6 7 8 4 3 2 1 Q1 Power33 MOSFET Maximum Ratings TC = 25°C unless o...