Document
FDPC8016S PowerTrench® Power Clip
October 2013
FDPC8016S
PowerTrench® Power Clip 25V Asymmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 20 A Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A
Q2: N-Channel Max rDS(on) = 1.4 mΩ at VGS = 10 V, ID = 35 A Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 32 A Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency.
Applications
Computing Communications General Purpose Point of Load
PIN1
PIN1
PAD10 V+(HS.