FDMS3600AS

FDMS3600AS PowerTrench® Power Stage FDMS3600AS PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A „ Max rDS(on) = 8.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel „ Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant April 2011 General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency. Applications „ Computing „ Communications „ General Purpose Point of Load „ Notebook VCORE Pin 1 G...