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FDMS3664S

Fairchild Semiconductor
Part Number FDMS3664S
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDMS3664S PowerTrench® Power Stage FDMS3664S PowerTrench® Power Stage January 2015 Asymmetric Dual N-Channel MOSFET ...
Datasheet PDF File FDMS3664S PDF File

FDMS3664S
FDMS3664S

Overview
FDMS3664S PowerTrench® Power Stage FDMS3664S PowerTrench® Power Stage January 2015 Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 11 mΩ at VGS = 4.
5 V, ID = 11 A Q2: N-Channel „ Max rDS(on) = 2.
6 mΩ at VGS = 10 V, ID = 25 A „ Max rDS(on) = 3.
2 mΩ at VGS = 4.
5 V, ID = 22 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual PQFN package.
The switch node has been internally con...


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