MOSFET
FDMS3615S PowerTrench® Power Stage
FDMS3615S
PowerTrench® Power Stage
25V Asymmetric Dual N-Channel MOSFET
August 2011...
Description
FDMS3615S PowerTrench® Power Stage
FDMS3615S
PowerTrench® Power Stage
25V Asymmetric Dual N-Channel MOSFET
August 2011
Features
General Description
Q1: N-Channel Max rDS(on) = 5.8 mΩ at VGS = 10 V, ID = 16 A Max rDS(on) = 8.3 mΩ at VGS = 4.5 V, ID = 13 A Q2: N-Channel Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 4.6 mΩ at VGS = 4.5 V, ID = 15 A Low inductance packaging shortens rise/fall times, resulting in
lower switching losses MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing RoHS Compliant
Pin 1
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.
Applications
Computing
Communications
General Purpose Point of Load
Notebo...
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