FDMS3610S

FDMS3610S PowerTrench® Power Stage December 2011 FDMS3610S PowerTrench® Power Stage 25V Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A „ Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A Q2: N-Channel „ Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency. Applications „ Computing „ Communications „ General Purpose Point of Load „ Notebook VCORE...