MOSFET
FDMS3610S PowerTrench® Power Stage
December 2011
FDMS3610S
PowerTrench® Power Stage
25V Asymmetric Dual N-Channel MOS...
Description
FDMS3610S PowerTrench® Power Stage
December 2011
FDMS3610S
PowerTrench® Power Stage
25V Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A
Q2: N-Channel Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
General Description
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.
Applications
Computing Communications General Purpose Point of Load Notebook VCORE...
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