FDMS36101L_F085

FDMS36101L_F085 N-Channel Power Trench® MOSFET FDMS36101L_F085 N-Channel Power Trench® MOSFET 100V, 38A, 26mΩ June 2013 Features „ Typ rDS(on) = 18mΩ at VGS = 10V, ID = 20A „ Typ Qg(tot) = 70nC at VGS = 10V, ID = 20A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Integrated Starter/alternator „ Primary Switch for 12V Systems For current package drawing, please refer to the Fairchild website at www.fairchildsemi.com/packaging MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single Pulse Avalanche Energy PD Power Dissipation Derate above 25oC TJ, TSTG RθJC RθJA Operating and Storage Temperature Thermal Resistance Junction to Case Maximum Thermal Resistance Junction to Ambient TC = 25°C TC = 25°C (No...