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FDMS3606AS

Fairchild Semiconductor
Part Number FDMS3606AS
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDMS3606AS PowerTrench® Power Stage FDMS3606AS PowerTrench® Power Stage September 2011 30 V Asymmetric Dual N-Channel...
Datasheet PDF File FDMS3606AS PDF File

FDMS3606AS
FDMS3606AS

Overview
FDMS3606AS PowerTrench® Power Stage FDMS3606AS PowerTrench® Power Stage September 2011 30 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 11 mΩ at VGS = 4.
5 V, ID = 11 A Q2: N-Channel „ Max rDS(on) = 1.
9 mΩ at VGS = 10 V, ID = 27 A „ Max rDS(on) = 2.
8 mΩ at VGS = 4.
5 V, ID = 23 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual PQFN package.
The switch node has been inter...


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